The AFT27S010N 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.
The AFT27S010N 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.
器件型号 | 数量 | 器件厂商 | 器件描述 | 数据手册 | ECAD模型 | 风险等级 | 参考价格 | 更多信息 |
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2N7002K-7 | 1 | Diodes Incorporated | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 |
ECAD模型 下载ECAD模型 |
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$0.22 | 查看 | |
CGA5L1X7R1V106K160AE | 1 | TDK Corporation of America | Ceramic Capacitor, Multilayer, Ceramic, 35V, 10% +Tol, 10% -Tol, X7R, 15% TC, 10uF, Surface Mount, 1206, CHIP, HALOGEN FREE, ROHS AND REACH COMPLIANT |
ECAD模型 下载ECAD模型 |
|
$1.31 | 查看 | |
ZTX653 | 1 | Diodes Incorporated | Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
ECAD模型 下载ECAD模型 |
|
$0.75 | 查看 |
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