Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.
器件型号 | 数量 | 器件厂商 | 器件描述 | 数据手册 | ECAD模型 | 风险等级 | 参考价格 | 更多信息 |
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C1206C106K4RACAUTO | 1 | KEMET Corporation | Capacitor, Ceramic, Chip, General Purpose, 10uF, 16V, ±10%, X7R, 1206 (3216 mm), Sn/NiBar, -55º ~ +125ºC, Bulk |
ECAD模型 下载ECAD模型 |
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$0.54 | 查看 | |
CRCW06030000Z0EC | 1 | Vishay Intertechnologies | Fixed Resistor, Metal Glaze/thick Film, 0.1W, 0ohm, Surface Mount, 0603, CHIP, HALOGEN FREE AND ROHS COMPLIANT |
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$0.1 | 查看 | |
TT330N16KOF | 1 | Infineon Technologies AG | Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, MODULE-7 |
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$360.61 | 查看 |
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